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QT114 PDF预览

QT114

更新时间: 2024-02-25 18:31:12
品牌 Logo 应用领域
高通 - QUALCOMM 传感器
页数 文件大小 规格书
14页 247K
描述
QLEVEL⑩ SENSOR IC

QT114 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOP, SOP8,.25Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
商用集成电路类型:CONSUMER CIRCUITJESD-30 代码:R-PDSO-G8
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
电源:3 V认证状态:Not Qualified
子类别:Other Consumer ICs表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

QT114 数据手册

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If the QT114 is connected to an external circuit via a long Supply drain can be calculated from the adjusted voltage  
cable, it is possible for ground-bounce to cause damage to droop using the basic charge equation:  
the OUT pins; even though the transients are led away from  
the QT114 itself, the connected signal or power ground line  
will act as an inductor, causing a high differential voltage to  
build up on the OUT wires with respect to ground. If this is a  
possibility, the OUT pins should have a resistance in series  
with them on the sensor PCB to limit current; this resistor  
should be as large as can be tolerated by the load.  
VC  
i =  
t
where C is the supply capacitor's value, t is the elapsed  
measurement time in seconds, and DV is the adjusted  
voltage droop on C.  
3.7 PC BOARD LAYOUT  
3.5 SAMPLE CAPACITOR  
There are only a few important issues for the PCB layout. For  
RF susceptibility reasons it should be compact, and if  
possible use SMT components and a ground plane (Section  
3.8). Lines for SNS1 and SNS2 should be short and not run  
directly over the ground plane to reduce Cx loading, which  
adversely affects sensitivity (Section 3.2). ESD issues should  
be taken into account (Section 3.4). The board should not be  
located in a place where there are wild temperature swings  
which can cause excessive drift in Cs. The voltage regulator  
should be located nearby and should only be shared with  
other circuits that do not induce supply sags or spikes  
(Section 3.6).  
Charge sampler Cs should be a stable grade of capacitor,  
like PPS film, NPO ceramic, or polycarbonate. The  
acceptable Cs range is anywhere from 10nF to 100nF  
(0.1uF) and its required value will depend on load Cx. In  
some cases, to achieve the 'right' value, two or more  
capacitors may need to be wired in parallel.  
The value of Cs controls the calibration point (Section 3.2)  
and its selection should not be taken lightly.  
3.6 POWER SUPPLY  
The power supply can range from 2.5 to 5.0 volts. At 3 volts  
current drain averages less than 20µA in most cases.  
Operation can be from batteries, especially stable Lithium  
cells, but be cautious about loads causing supply droop  
(Section 3.3.1).  
3.8 RFI / EMI ISSUES  
3.8.1 SUSCEPTIBILITY  
The QT114 is remarkably resistant to RF fields. With enough  
field strength at frequencies above 100MHz, internal  
protection diode conduction at the SNS1 and SNS2 pins can  
occur and destroy the charge-transfer process, causing false  
detections or desensitization, or alternating cycles of both.  
If the power supply is shared with another electronic system,  
care should be taken to assure that the supply is free of  
digital spikes, sags, and surges which can adversely affect  
the QT114.  
Susceptibility can be dramatically reduced by adding a  
resistor in series with the Sense line, between 2K to 60K  
ohms depending on load Cx. This has the effect of creating a  
natural low-pass filter in conjunction with the Cs capacitor to  
filter out external RF components. If an ESD network is used  
(Figure 3-5), the added resistor should be placed between  
the clamp diodes and the sense probe, and Re1 should be  
made very small, 1K ohms or less, or even eliminated. With a  
50pF load the added resistance should be no greater than  
about 5.6K ohms, while at 10pF it can be as high as 27K; the  
value should be chosen to allow at least 7 RC time constants  
of settling with a 2µs charge time for efficient, stable  
operation. 5% tolerance resistors can be used.  
If desired, the supply can be regulated using a conventional  
low current regulator, for example CMOS regulators that have  
nanoamp quiescent currents. The voltage regulator should  
not have a minimum load specification, which almost  
certainly will be violated by the QT114's low current  
requirement.  
Since the QT114 operates in a burst mode, almost all the  
power is consumed during the course of each burst. During  
the time between bursts the sensor is quiescent.  
3.6.1 MEASURING  
SUPPLY  
C
URRENT  
Measuring average power consumption is a fairly difficult  
task, due to the burst nature of the QT110's operation. Even  
a good quality RMS DMM will have difficulty tracking the low  
burst rate.  
A great number of susceptibility problems can be traced to  
RF fields coupling directly to components on the PCB.  
Therefore a shielded, grounded housing is recommended to  
reduce susceptibility. The use of SMT circuitry is also highly  
recommended; physically reducing lead lengths of the wiring  
traces and pins, along with a poured-copper ground plane,  
will dramatically reduce the coupling of external RF fields.  
The simplest method for measuring average current is to  
replace the power supply with a large value low-leakage  
electrolytic capacitor, for example 2,700µF. 'Soak' the  
capacitor by connecting it to a bench supply at the desired  
operating voltage for 24 hours to form the electrolyte and  
reduce leakage to a minimum. Connect the capacitor to the  
QT114 circuit at T=0, making sure there will be no detections  
during the measurement interval and no loads on the OUT  
pins; at T=30 seconds measure the capacitor's voltage with a  
DMM. Repeat the test without a load to measure the  
capacitor's internal leakage, and subtract the internal leakage  
result from the voltage droop measured during the QT114  
load test. Be sure the DMM is connected only at the end of  
each test, to prevent the DMM's own impedance from  
contributing to the capacitor's discharge.  
3.8.2 RF EMISSIONS  
RF emissions are extremely weak, as the charge-transfer  
pulse frequency is only about 170kHz and the bursts are  
sparsely spaced, so that the average spectral power density  
is extremely low. The addition of a series resistor for EMI  
reasons (above) will dramatically reduce edge rise and fall  
times, resulting in an even greater reduction in emitted RF  
energy.  
LQ  
9
QT114 R1.04/1106  

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