Datasheet > QD406S

QD406S

更新时间： 2022-02-26 12:19:01

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
8页	287K
描述
Planar structure with EPI wafer

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中文翻译

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数据手册

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QD406S 数据手册

QR406/QR406F/QR406D/QD406S

100

125

150

100

T_C, Case Temperature (°C)

V_R, Reverse Bias Voltage (V)

Fig.1 Forward Current Derating Curve

Fig.2 Typical Junction Capacitance

T_J= 150°C

T_J= 125°C

0.1

T_J= 75°C

0.01

0.1

T_J= 25°C

0.001

T_J= 75°C

T_J= 25°C

0.0001

0.01

10 20 30 40 50 60 70 80 90 100

0.5

1.5

Percent of Rated Peak Reverse Voltage (%)

V_F, Forward Voltage (V)

Fig.3 Typical Reverse Characteristics

Fig.4 Typical Forward Characteristics

160

140

120

100

350

300

250

200

150

IF=IO

100

IF=IO

VR=400V

T_J=125^oC

100

150

200

250

300

100

150

200

250

300

di / dt (A/μs)

Fig.5 Typical Reverse recovery time versus di/dt

di / dt (A/μs)

Fig.6 Typical Reverse recovery charges versus di/dt

May 8,2014-REV.00

PAGE . 3

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