Datasheet > Q62702G63

Q62702G63

更新时间： 2024-11-17 22:11:51

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器手机 GSM
页数	文件大小	规格书
10页	102K
描述
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%)

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中文翻译

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数据手册

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Q62702G63 数据手册

CGY 96

GaAs MMIC

Power amplifier for GSM class 4 phones

3.2 W (35dBm) output power at 3.5 V

Overall power added efficiency 50 %

Fully integrated 3 stage amplifier

Power ramp control

Input matched to 50 ohms, simple output match

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking

Ordering code

(taped)

Package

CGY 96

Q62702G63

MW 16

Maximum ratings

Characteristics

Symbol

max. Value

Unit

Positive supply voltage

Supply current

Channel temperature

Storage temperature

Pulse peak power dissipation

150

°C

-55...+150

tbd

stg

Pulse

duty cycle 12.5%, ton=0.577ms

Total power dissipation (Ts ≤ 80 °C)

Ts: Temperature at soldering point

tbd

tot

Thermal Resistance

Characteristics

Symbol

max. Value

Unit

Channel-soldering point

tbd

K/W

thChS

Siemens Aktiengesellschaft

Semiconductor Group

23.07.1998

1998-11-01

HL HF PE GaAs

12 3 4 5 6 7...10

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