Datasheet > Q62702-S633

Q62702-S633

更新时间： 2024-01-02 13:06:04

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	84K
描述
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

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中文翻译

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数据手册

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Q62702-S633 数据手册

BGA 425

Si-MMIC-Amplifier

Preliminary data

in SIEGET 25-Technologie

• Multifunctional casc. 50 Ω block (LNA / MIX)

• Unconditionally stable

• Gain |S | = 18.5 dB at 1.8 GHz (appl.1)

gain |S | = 22 dB at 1.8 GHz (appl.2)

= +7 dBm at 1.8 GHz (V =3V,I =9.5mA)

D D

3out

VPS05605

• Noise figure NF = 2.2 dB at 1.8 GHz

• Reverse isolation >28 dB (appl.1) >35 dB (appl.2)

Circuit Diagram

• typical device voltage V = 2 V to 5 V

Tape loading orientation

OUTA

OUTB

2, 5

GND

EHA07371

ESD: Electrostatic discharge sensitive device,

observe handling precaution!

PIN Configuration

2, GND

Q62702-G0058 SOT-343 4, IN 5, GND

Type

Marking Ordering Code Package 1, Out B

3, Out A

6, +V

BGA 425 BMs

Maximum Ratings

Parameter

Symbol

Value

Unit

Device current

Device voltage

V ,+V

150

dBm

°C

Total power dissipation, T ≤ tbd °C

tot

RFin

-10

R input power

Junction temperature

Ambient temperature

Storage temperature

150

-65 ...+150

stg

Thermal Resistance

Junction - soldering point

K/W

≤ tbd

thJS

1) T is measured on the ground lead at the soldering point to the pcb

Semiconductor Group

Jul-14-1998

1998-11-01

Semiconductor Group

12 3 4 5 6 7 8

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