5秒后页面跳转
PY26435WM PDF预览

PY26435WM

更新时间: 2024-11-10 21:01:23
品牌 Logo 应用领域
PYRAMID 可编程只读存储器内存集成电路
页数 文件大小 规格书
9页 552K
描述
UVPROM, 8KX8, CMOS, CDIP24, 0.600 INCH, CERAMIC, DIP-24

PY26435WM 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:0.600 INCH, CERAMIC, DIP-24针数:24
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.47
JESD-30 代码:R-CDIP-T24JESD-609代码:e0
内存密度:65536 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:24字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:WDIP封装形状:RECTANGULAR
封装形式:IN-LINE, WINDOW并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:5.715 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

PY26435WM 数据手册

 浏览型号PY26435WM的Datasheet PDF文件第2页浏览型号PY26435WM的Datasheet PDF文件第3页浏览型号PY26435WM的Datasheet PDF文件第4页浏览型号PY26435WM的Datasheet PDF文件第5页浏览型号PY26435WM的Datasheet PDF文件第6页浏览型号PY26435WM的Datasheet PDF文件第7页 
PY263/PY264  
8K x 8 REPROGRAMMABLE PROM  
FEATURES  
EPROM Technology for reprogramming  
High Speed  
Windowed devices for reprogramming  
Fully TTL Compatible Inputs and Outputs  
– 25/35/45/55 ns (Commercial)  
– 25/35/45/55 ns (Military)  
Standard Pinout (JEDEC Approved)  
– 24-Pin 300 mil Windowed CERDIP (PY263)  
– 24-Pin 300 mil Non-Windowed Plastic DIP  
(PY263)  
Low Power Operation:  
– 24-Pin 600 mil Windowed CERDIP (PY264)  
– 24-Pin 600 mil Non-Windowed Plastic DIP  
(PY264)  
– 660 mW Commercial  
– 770 mW Military  
Single 5V±10% Power Supply  
DESCRIPTION  
The PY263 and PY264 are 8Kx8 CMOS PROMs. The  
devices are available in windowed packages which when  
exposed to UV light, the memory content in the PROM is  
erased and can be reprogrammed. EPROM technology is  
used in the memory cells for programming. The EPROM  
requires a 12.5V for programming. Devices are tested to  
insure that performance of the device meets the DC and  
AC specification limits after customer programming.  
To perform a read operation from the device, CS is LOW.  
The memory contents in the address established by the  
Address pins (A0 to A12) will become available on the out-  
puts (O0 to O7).  
The PY263 is available in 24-pin 300 mil Ceramic DIPs  
(Windowed) and Plastic DIPs (Non-Windowed).  
The PY264 is available in 24-pin 600 mil Ceramic DIPs  
(Windowed) and Plastic DIPs (Non-Windowed).  
FUNCTIONAL BLOCk DIAꢀRAM  
PIN CONFIꢀURATION  
DIP (P8, WD2)  
Note: Window on  
WD2 pacꢁage only  
Document # EPROM102 REV A  
Revised March 2009  

与PY26435WM相关器件

型号 品牌 获取价格 描述 数据表
PY264-35WM PYRAMID

获取价格

8K X 8 REPROGRAMMABLE PROM
PY26435WMB PYRAMID

获取价格

UVPROM, 8KX8, CMOS, CDIP24, 0.600 INCH, CERAMIC, DIP-24
PY264-35WMB PYRAMID

获取价格

8K X 8 REPROGRAMMABLE PROM
PY264-45PC PYRAMID

获取价格

8K X 8 REPROGRAMMABLE PROM
PY26445PM PYRAMID

获取价格

UVPROM, 8KX8, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24
PY264-45PM PYRAMID

获取价格

8K X 8 REPROGRAMMABLE PROM
PY26445PMB PYRAMID

获取价格

UVPROM, 8KX8, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24
PY264-45PMB PYRAMID

获取价格

8K X 8 REPROGRAMMABLE PROM
PY26445WC PYRAMID

获取价格

UVPROM, 8KX8, CMOS, CDIP24, 0.600 INCH, CERAMIC, DIP-24
PY264-45WC PYRAMID

获取价格

8K X 8 REPROGRAMMABLE PROM