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PW5D8EA

更新时间: 2024-11-26 17:15:43
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
9页 835K
描述
SOT-723

PW5D8EA 数据手册

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N-Channel Logic Level Enhancement  
Mode Field Effect Transistor  
PW5D8EA  
NIKO-SEM  
SOT-723  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
20V  
RDS(ON)  
ID  
0.8A  
300mΩ  
Features  
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
• Optimized Gate Charge to Minimize Switching Losses.  
ESD Protection - HBM Class : 1C.  
Applications  
Protection Circuits Applications.  
Logic/Load Switch Circuits Applications.  
Space Limit & Smart Devices Applications.  
G: GATE  
D: DRAIN  
S: SOURCE  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Gate-Source Voltage  
SYMBOL  
LIMITS  
±10  
UNITS  
VGS  
V
TA = 25 °C  
TA = 70 °C  
0.8  
Continuous Drain Current2  
Pulsed Drain Current1  
Power Dissipation  
ID  
IDM  
A
A
0.62  
2.4  
TA = 25 °C  
TA = 70 °C  
0.3  
PD  
W
°C  
0.2  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJA  
TYPICAL  
MAXIMUM  
400  
UNITS  
°C / W  
Junction-to-Ambient  
1Limited by maximum junction temperature.  
2Limited by package.  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
LIMITS  
MIN TYP MAX  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
STATIC  
UNIT  
V
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
V(BR)DSS  
VGS(th)  
20  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
0.4 0.63  
1
I-27-1  
REV 1.2  
1

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