生命周期: | Active | 零件包装代码: | TSSOP |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.26 | 其他特性: | BUILT IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
PUMB15,125 | NXP | TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
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PUMB15,165 | NXP | TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
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PUMB15/T2 | NXP | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, |
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PUMB16 | NXP | Low VCEsat (BISS) transistors |
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PUMB16 | NEXPERIA | PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhmProduction |
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PUMB16,115 | NXP | PEMB16; PUMB16 - PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm TSSOP 6 |
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