是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO 1 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PUMB16 | NXP |
获取价格 |
Low VCEsat (BISS) transistors |
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PUMB16 | NEXPERIA |
获取价格 |
PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhmProduction |
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PUMB16,115 | NXP |
获取价格 |
PEMB16; PUMB16 - PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm TSSOP 6 |
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PUMB17 | NXP |
获取价格 |
Low VCEsat (BISS) transistors |
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PUMB17 | NEXPERIA |
获取价格 |
PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhmProduction |
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PUMB17,115 | NXP |
获取价格 |
PEMB17; PUMB17 - PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm TSSOP 6 |
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PUMB17/T1 | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, |
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PUMB17/T2 | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, |
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PUMB18 | PHILIPS |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon |
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PUMB18 | NXP |
获取价格 |
Low VCEsat (BISS) transistors |
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