MAXIMUM RATINGS
REPETITIVE PEAK OFF-STATE VOLTAGE (1)
GATE OPEN, AND TJ = 110° C
SYMBOL VDRM
DEVICE NUMBERS
UNITS
200
*T215
*T415
*T615
*T225
*T425
*T625
*T230
*T430
*T630
*T240
*T440
*T640
VDRM
400
600
VOLT
RMS ON-STATE CURRENT AT TC = 80º C AND
CONDUCTION, ANGLE OF 360º
PEAK SURGE (NON-REPETITIVE) ON-STATE
CURRENT, ONE-CYCLE, AT 50HZ OR 60HZ
IT(RMS)
ITSM
15
25
30
40
AMP
AMP
150
250
300
400
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
PEAK GATE – POWER DISSIPATION AT IGT < IGTM
AVERAGE GATE - POWER DISSIPATION
STORAGE TEMPERATURE RANGE
IGTM
PGM
PG(AV)
TSTG
TOPER
4
4
12
40
0.75
12
40
0.75
AMP
WATT
WATT
°C
40
0.8
40
0.8
-40 to +150
-40 to +110
OPERATING TEMPERATURE RANGE, TJ
°C
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PEAK OFF - STATE CURRENT (1) GATE OPEN
TC = 110° C VDRM = MAX. RATING
MA
MAX.
IDRM
VTM
IHO
1.0
2.2
60
1.0
1.0
2.0
60
1.0
2.0
60
MAXIMUM ON - STATE VOLTAGE, (1)
AT TC = 25° C AND IT = RATED AMPS
VOLT
MAX.
2.5
60
DC HOLDING CURRENT, (1) GATE
OPEN AND TC = 25° C
MA
MAX.
CRITICAL RATE-OF-RISE OF OFF-
STATE VOLTAGE, (1) FOR VD =
VDRM GATE OPEN, TC = 110° C
CRITICAL
dv/dt
100
100
3
200
3
200
3
V/µSEC.
V/µSEC.
CRITICAL RATE-OF-RISE OF
COMMUTATION VOLTAGE, (1) AT
TC = 80° C, GATE UNENERGIZED,
VD = VDRM, IT = IT (RMS)
COMMUTATING
3
dv/dt
DC GATE - TRIGGER CURRENT FOR
VD = 12VDC. RL = 30 W AND AT TC = 25° C
(T2 + GATE + T2 - GATE-) Q 1 & 3
(T2 + GATE - T2 - GATE +) Q 2 & 4
(2)
IGT
100 I, III 100 I, III 100 I, III
150 II, IV 150 II, IV 150 II, IV 150 II, IV
100 I, III
MA
MAX.
DC GATE - TRIGGER VOLTAGE FOR
VD = 12VDC. RL = 30 W AND AT TC = 25° C
VOLT
MAX.
VGT
TGT
2.5
3
2.5
3
2.5
3
2.5
3
GATE CONTROLLED TURN-ON TIME
FOR VD = VDRM IGT = 200MA, TR = 0.1 µSEC.
IT = 10A (PEAK) AND TC = 25° C
µSEC.
THERMAL RESISTANCE, JUNCTION-TO-CASE
PRESS-FIT
STUD
ISOLATED STUD
1.8
1.8
2.1
1.8
1.8
2.1
1.8
1.8
2.1
1.8
1.8
2.1
R0J-C
°C / WATT
TYP
Notes:
(1) All values apply in either direction.
(2) Other gate options available; Consult factory.
WARNING
Isolated stud products should be handled with care. The ceramic used
in these thyristors contains BERYLLIUM OXIDE as a major ingredient.
P
PRESS FIT
DO NOT crush, grind or abrade these portions of the thyristors because
the dust resulting from such action may be HARZARDOUS if INHALED.
SP
PRESS FIT WITH STUD MOUNT
PRESS FIT WITH ISOLATED STUD
MOUNT
SIP
*Add prefix for package style desired.
SOLID STATE CONTROL DEVICES
25