Datasheet > PT200S16

PT200S16

更新时间： 2024-11-21 09:59:39

品牌	Logo	应用领域
NIEC		二极管
页数	文件大小	规格书
3页	128K
描述
DIODE MODULE 200A/1200V/1600V

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中文翻译

获取价格

数据手册

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PT200S16 数据手册

DIODE MODULE 200A/1200V/1600V

PT200S12 PT200S16

OUTLINE DRAWING

FEATURES

* Isolated Base

* 3 Phase Bridge Circuit

* Designed Power Circuit Board

* High Surge Capability

* UL Recognized, File No. E187184

TYPICAL APPLICATIONS

* Rectified For General Use

Maximum Ratings

Approx Net Weight:370g

Type / Grade

Symbol

Unit

Parameter

PT200S12

PT200S16

Repetitive Peak Reverse Voltage *1

Non Repetitive Peak Reverse Voltage *1

V_RRM

V_RSM

1200

1300

1600

1750

Max Rated

Parameter

Unit

Conditions

Value

3-Phase Full Wave Rectified

Tc=Tt(Terminal)=72°C

50 Hz Half Sine Wave,1Pulse

Non-repetitive

Average Rectified Output Current

Surge Forward Current *1

I_O(AV)

I_FSM

200

1850

I Squared t *1

I²t

2msec to 10msec

170000

-40 to +150

-40 to +125

2500

A²s

°C

Operating JunctionTemperature Range

Storage Temperature Range

Isoration Voltage

Tjw

Tstg

Viso

Base Plate to Terminals, AC1min

Case mounting

Terminals

Greased

M5 Screw

2.4 to 2.8

Mounting torque

Ftor

N•m

Electrical • Thermal Characteristics

Symbol

I_RM

V_FMI_FM= 200A, Tj=25°C

Test Conditions

V_RM= V_RRM,Tj= 150°C

Max. Unit

Characteristics

Peak Reverse Current *1

Peak Forward Voltage *1

1.35

0.1

Rth(j-c) Junction to Case (Total)

Thermal Resistance

°C/W

Base Plate to Heat Sink with Thermal

Compound (Total)

Rth(c-f)

0.06

*1: Value Per 1Arm

12 3

中文翻译

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