Datasheet > PQMB11

PQMB11

更新时间： 2024-11-17 11:14:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	702K
描述
PNP/PNP resistor-equipped transistors; R1=10kΩ,R2=10kΩProduction

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PQMB11 数据手册

PQMB11

PNP/PNP resistor-equipped transistors;

R1 = 10 kΩ, R2 = 10 kΩ

26 October 2015

Product data sheet

1. General description

PNP/PNP Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6

(SOT1216) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PQMH11.

NPN/PNP complement: PQMD3.

2. Features and benefits

100 mA output current capability

Built-in bias resistors

Simplifies circuit design

Low package height of 0.37 mm

Reduces component count

Reduces pick and place costs

AEC-Q101 qualified

•

3. Applications

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications

Mobile applications

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-50

I_O

output current

-100

Per transistor

bias resistor 1

T_amb= 25 °C

[1]

kΩ

R2/R1

bias resistor ratio

0.8

1.2

[1] See section "Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...14

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