Datasheet > PN4393-TR3

PN4393-TR3

更新时间： 2023-01-03 08:34:30

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	78K
描述
Transistor

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数据手册

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PN4393-TR3 数据手册

2N/PN/SST4391 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Forward Transconductance and Output onductance

vs. Gate-Source Cutoff Voltage*

Noise Voltage vs. Frequency

100

500

and g @ V = 20 V

os DS

V_DS= 10 V

= 0 V, f = 1 kHz

400

200

I_D= 1 mA

200

100

I_D= 10 mA

100

–2

–4

–6

–8

–10

100

1 k

10 k

100 k

f – Frequency (Hz)

V_GS(off)– Gate-Source Cutoff Voltage (V)

Gate Leakage Current

Common-Gate Input Admittance

10 nA

I_GSS@ 125_C

V_DG= 10 V

_D= 10 mA

= 25_C

= 10 mA

= 125_C

1 nA

1 mA

100 pA

10 pA

1 pA

1 mA

10 mA

@ 25_C

GSS

= 25_C

@ I

G(on)

0.1 pA

0.1

100

200

500

1000

V_DG– Drain-Gate Voltage (V)

f – Frequency (MHz)

Common-Gate Forward Admittance

Common-Gate Reverse Admittance

100

V_DG= 10 V

_D= 10 mA

= 25_C

V_DG= 10 V

_D= 10 mA

= 25_C

–g

–b

1.0

–g

0.1

0.01

0.1

100

200

500

1000

100

200

500

1000

f – Frequency (MHz)

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-5

1 2 3 456 7

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