PN4416
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix PN4416
The PN4416 is a N-Channel high frequency JFET amplifier
FEATURES
The PN4416 N-channel JFET is designed to provide
DIRECT REPLACEMENT FOR SILICONIX PN4416
EXCEPTIONAL GAIN (400 MHz)
VERY LOW NOISE FIGURE (400 MHz)
VERY LOW DISTORTION
HIGH AC/DC SWITCH OFF‐ISOLATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
high-performance amplification at high frequencies.
10dB (min)
4dB (max)
The hermetically sealed TO-72 package is well suited
for military applications. The TO-92 package provides a
lower cost commercial option
PN4416 Benefits:
Wideband High Gain
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
‐65°C to +200°C
‐55°C to +135°C
300mW
10mA
‐30V
PN4416 Applications:
High-Frequency Amplifier / Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
PN4416 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
IDSS
IGSS
gfs
gos
Ciss
Crss
Coss
CHARACTERISTIC
MIN
‐30
‐‐
5
‐‐
4500
‐‐
‐‐
‐‐
‐‐
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
6
MAX
‐‐
‐6
UNITS
V
V
mA
nA
µS
µS
pF
pF
pF
nV/√Hz
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 15V, ID = 1nA
VDS = 15V, VGS = 0V
VGS = ‐20V, VDS = 0V
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current
Gate Leakage Current
15
‐0.1
7500
50
0.8
4
Forward Transconductance
VDS = 15V, VGS = 0V, f = 1kHz
Output Conductance
2
Click To Buy
Input Capacitance
Reverse Transfer Capacitance2
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 10V, VGS = 0V, f = 1kHz
CONDITIONS
Output Capacitance2
2
‐‐
en
Equivalent Input Noise Voltage
PN4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
100 Mhz
MIN
400 Mhz
MIN MAX
UNITS
MAX
100
2500
75
gIss
bIss
Input Conductance
Input Susceptance2
Output Conductance
Output Susceptance2
Forward Transconductance
Power Gain2
‐‐
‐‐
1000
10000
100
4000
‐‐
‐‐
‐‐
µS
VDS = 15V, VGS = 0V
goss
‐‐
‐‐
boss
Gfs
‐‐
1000
‐‐
‐‐
‐‐
4000
10
‐‐
Gps
18
‐‐
‐‐
‐‐
dB
VDS = 15V, ID = 5mA
NF
Noise Figure2
2
4
VDS = 15V, ID = 5mA, RG = 1kΩ
NOTES
1 . Absolute maximum ratings are limiting values above which PN4416 serviceability may be impaired.
2. Not production tested, guaranteed by design
Micross Components Europe
Available Packages:
TO-72 (Bottom View)
TO-92 (Bottom View)
PN4416 in TO-72
PN4416 in TO-92
PN4416 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
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