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PN4250J05Z PDF预览

PN4250J05Z

更新时间: 2024-11-26 21:21:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
7页 294K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

PN4250J05Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.65
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):250JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PN4250J05Z 数据手册

 浏览型号PN4250J05Z的Datasheet PDF文件第2页浏览型号PN4250J05Z的Datasheet PDF文件第3页浏览型号PN4250J05Z的Datasheet PDF文件第4页浏览型号PN4250J05Z的Datasheet PDF文件第5页浏览型号PN4250J05Z的Datasheet PDF文件第6页浏览型号PN4250J05Z的Datasheet PDF文件第7页 
Discr ete P OWER & Sign a l  
Tech n ologies  
PN4250  
TO-92  
C
B
E
PNP General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 300 mA. Sourced  
from Process 68. See PN200 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN4250  
PD  
Total Device Dissipation  
625  
5.0  
mW  
°
mW/ C  
°
Derate above 25 C  
Thermal Resistance, Junction to Case  
83.3  
°
Rθ  
C/W  
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

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