Datasheet > PN2907A_D29Z

PN2907A_D29Z

更新时间： 2024-01-17 21:30:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	89K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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PN2907A_D29Z 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.57	最大集电极电流 (IC)：	0.8 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.625 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

PN2907A_D29Z 数据手册

PN2907A

MMBT2907A

PZT2907A

TO-92

SOT-23

Mark: 2F

SOT-223

PNP General Purpose Amplifier

This device is designed for use as a general purpose amplifier

and switch requiring collector currents to 500 mA. Sourced

from Process 63.

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

800

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

T_A= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN2907A

*MMBT2907A **PZT2907A

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

350

2.8

1,000

8.0

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1998 Fairchild Semiconductor Corporation

12 3 4 5 6 7

中文翻译

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