生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.48 | 最大集电极电流 (IC): | 0.8 A |
基于收集器的最大容量: | 8 pF | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 140 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.6 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PN2906ALEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |
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PN2906ATRELEADFREE | CENTRAL |
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Transistor |
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PN2906ATREPBFREE | CENTRAL |
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Transistor, |
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PN2906ATRETIN/LEAD | CENTRAL |
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Transistor |
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PN2906TRELEADFREE | CENTRAL |
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Transistor |
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PN2907 | FAIRCHILD |
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PNP General Purpose Amplifier |
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PN2907 | MICRO-ELECTRONICS |
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
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PN2907 | NXP |
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PNP switching transistor |
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PN2907 | CENTRAL |
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PNP SILICON TRANSISTOR |
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PN2907 | DCCOM |
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TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
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