PN2907

更新时间： 2024-09-29 06:04:31

品牌	Logo	应用领域
德欧泰克 - DIOTEC		晶体开关晶体管
页数	文件大小	规格书
2页	96K
描述
Si-Epitaxial Planar Switching Transistors

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中文翻译

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数据手册

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PN2907 数据手册

PN2907 / PN2907A

Si-Epitaxial Planar Switching Transistors

Si-Epitaxie-Planar-Schalttransistoren

PNP

Version 2006-09-12

Power dissipation

Verlustleistung

625 mW

Plastic case

Kunststoffgehäuse

TO-92

(10D3)

C B E

Weight approx. – Gewicht ca.

0.18 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

2 x 2.54

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Dimensions - Maße [mm]

Maximum ratings (T_A= 25°C)

Grenzwerte (T_A= 25°C)

PN2907

PN2907A

(2N2907)

(2N2907A)

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

B open

E open

C open

- V_CEO

- V_CBO

- V_EBO

P_tot

40 V

60 V

5 V

625 mW ¹)

Collector current – Kollektorstrom (dc)

- I_C

600 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

-55...+150°C

-55…+150°C

Characteristics (T_j= 25°C)

Kennwerte (T_j= 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis ²)

- I_C= 0.1 mA, - V_CE= 10 V

PN2907

PN2907A

h_FE

–

- I_C= 1 mA, - V_CE= 10 V

- I_C= 10 mA, - V_CE= 10 V

- I_C= 500 mA, - V_CE= 10 V

- I_C= 150 mA, - V_CE= 10 V

PN2907

PN2907A

h_FE

100

–

PN2907

PN2907A

h_FE

100

–

PN2907

PN2907A

h_FE

–

h_FE

100

–

300

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung ²)

- I_C= 150 mA, - I_B= 15 mA

- I_C= 500 mA, - I_B= 50 mA

- V_CEsat

–

0.4 V

1.6 V

Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t_p= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t_p= 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

中文翻译

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