Datasheet > PN2906ATRETIN/LEAD

PN2906ATRETIN/LEAD

更新时间： 2024-01-30 12:34:53

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	318K
描述
Transistor

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技术参数
数据手册

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PN2906ATRETIN/LEAD 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
最大集电极电流 (IC)：	0.6 A	配置：	Single
最小直流电流增益 (hFE)：	40	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

PN2906ATRETIN/LEAD 数据手册

浏览型号PN2906ATRETIN/LEAD的Datasheet PDF文件第2页

PN2906 PN2906A

PN2907 PN2907A

www.centralsemi.com

DESCRIPTION:

PNP SILICON TRANSISTOR

The CENTRAL SEMICONDUCTOR PN2906, PN2907

series types are silicon PNP epitaxial planar transistors

designed for small signal, general purpose switching

applications.

MARKING: FULL PART NUMBER

TO-92 CASE

PN2906

PN2907

PN2906A

PN2907A

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

600

625

Continuous Collector Current

Power Dissipation

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

200

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

PN2906

PN2907

PN2906A

PN2907A

MIN MAX

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=50V

CBO

CEV

=30V, V =0.5V

I =10μA

CBO

I =10mA

CEO

I =10μA

5.0

EBO

I =150mA, I =15mA

0.4

1.6

1.3

2.6

0.4

1.6

1.3

2.6

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

I =500mA, I =50mA

=20V, I =50mA, f=200MHz

200

MHz

=10V, I =0, f=1.0MHz

8.0

100

8.0

100

=2.0V, I =0, f=1.0MHz

=30V, I =150mA, I =15mA

off

=6.0V, I =150mA, I =I =15mA

B1 B2

R2 (30-January 2012)

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