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PN2222A PDF预览

PN2222A

更新时间: 2024-11-30 22:26:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
6页 116K
描述
NPN General Purpose Amplifier

PN2222A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-W3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.56最大集电极电流 (IC):1 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):75JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

PN2222A 数据手册

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PN2222A  
MMBT2222A  
PZT2222A  
C
C
E
E
C
TO-92  
C
B
B
B
SOT-23  
Mark: 1P  
E
SOT-223  
MMPQ2222  
NMT2222  
B4  
E4  
C2  
B3  
E1  
E3  
B2  
E2  
C1  
B1  
E1  
C4  
C4  
C3  
B2  
C3  
C2  
E2  
B1  
C2  
C1  
SOT-6  
Mark: .1B  
SOIC-16  
C1  
pin #1  
NPN General Purpose Amplifier  
This device is for use as a medium power amplifier and switch  
requiring collector currents up to 500 mA. Sourced from Pro-  
cess 19.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
75  
V
V
V
A
6.0  
1.0  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
1997 Fairchild Semiconductor Corporation  

PN2222A 替代型号

型号 品牌 替代类型 描述 数据表
PN2222ATF ONSEMI

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PN2222ABU ONSEMI

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NPN Bipolar Transistor

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