Datasheet > PN2222A

PN2222A

更新时间： 2024-12-01 06:04:31

品牌	Logo	应用领域
TRSYS		晶体开关晶体管局域网
页数	文件大小	规格书
3页	88K
描述
NPN SILICON PLANAR SWITCHING TRANSISTORS

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中文翻译

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数据手册

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PN2222A 数据手册

Transys

Electronics

I M I T E D

NPN SILICON PLANAR SWITCHING TRANSISTORS

PN2222

PN2222A

CBE

TO-92

Complementary Silicon Transistors For Switching And Linear Applications

DC Amplifier & Driver For Industrial Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

2222

2222A

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Power Dissipation @Ta=25 degC

Derate Above 25deg C

VCEO

VCBO

VEBO

5.0

6.0

600

625

1.5

mW/deg C

deg C

@ Tc=25 degC PD

Derate Above 25deg C

Operating And Storage Junction

Temperature Range

-55 to +150

Tj, Tstg

THERMAL RESISTANCE

Junction to Case

Junction to Ambient

83.3

200

Rth(j-c)

Rth(j-a)

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

2222

2222A

>40

>75

>6.0

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter-Base Voltage

Collector-Cut off Current

VCEO

VCBO

VEBO

ICBO

IC=10mA,IB=0

IC=10uA.IE=0

IE=10uA, IC=0

VCB=50V, IE=0

VCB=60V, IE=0

Ta=150 deg C

>30

>60

>5.0

<10

VCB=50V, IE=0

VCB=60V, IE=0

VCE=60V, VBE=3V

VCE=10V, IB=0

VEB=3V, IC=0

VCE=60V, VBE=3V

<10

<0.4

<1.6

<1.3

<2.6

<10

ICEX

ICEO

IEBO

IBEX

Emitter-Cut off Current

Base-Cut off Current

<10

<20

Collector Emitter Saturation Voltage VCE(Sat)* IC=150mA,IB=15mA

<0.3

<1.0

0.6-1.2

<2.0

IC=500mA,IB=50mA

VBE(Sat) * IC=150mA,IB=15mA

IC=500mA,IB=50mA

Base Emitter Saturation Voltage

12 3

中文翻译

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