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PN2222 PDF预览

PN2222

更新时间: 2024-11-30 06:04:31
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体开关晶体管
页数 文件大小 规格书
2页 97K
描述
Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren

PN2222 数据手册

 浏览型号PN2222的Datasheet PDF文件第2页 
PN2222 / PN2222A  
PN2222 / PN2222A  
Si-Epi-Planar Switching Transistors  
Si-Epi-Planar Schalttransistoren  
NPN  
NPN  
Version 2006-09-12  
Power dissipation  
Verlustleistung  
625 mW  
Plastic case  
Kunststoffgehäuse  
TO-92  
(10D3)  
C B E  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
2 x 2.54  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
PN2222  
PN2222A  
(2N2222)  
(2N2222A)  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
VCEO  
VCBO  
VEBO  
Ptot  
30 V  
40 V  
75 V  
6 V  
60 V  
5 V  
625 mW 1)  
Collector current – Kollektorstrom (dc)  
IC  
600 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
IC = 0.1 mA, VCE = 10 V  
hFE  
hFE  
hFE  
hFE  
35  
50  
75  
IC = 1 mA,  
IC = 10 mA,  
VCE = 10 V  
VCE = 10 V  
IC = 150 mA, VCE = 10 V  
100  
300  
IC = 500 mA, VCE = 10 V  
PN2222  
PN2222A  
hFE  
hFE  
30  
40  
h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA  
Small signal current gain  
Kleinsignal-Stromverstärkung  
PN2222A  
PN2222A  
hfe  
hfe  
50  
75  
300  
375  
Input impedance – Eingangs-Impedanz  
PN2222A  
PN2222A  
hie  
hie  
2 kΩ  
0.25 kΩ  
8 kΩ  
1.25 kΩ  
Output admittance – Ausgangs-Leitwert  
PN2222A  
PN2222A  
hoe  
hoe  
5 µS  
25 µS  
35 µS  
200 µS  
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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