PMR280UN

更新时间： 2024-02-13 10:35:02

品牌	Logo	应用领域
恩智浦 - NXP		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
12页	88K
描述
N-channel mTrenchMOS ultra low level FET

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中文翻译

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技术参数
数据手册

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PMR280UN 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.74
Base Number Matches：	1

PMR280UN 数据手册

PMR280UN

N-channel µTrenchMOS™ ultra low level FET

M3D173

Rev. 01 — 5 March 2004

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

■ Surface mounted package

■ Low on-state resistance

■ Footprint 63% smaller than SOT23

■ Low threshold voltage.

1.3 Applications

■ Driver circuits

■ Switching in portable appliances.

1.4 Quick reference data

■ V_DS≤ 20 V

■ I_D≤ 0.98 A

■ P_tot≤ 0.53 W

■ R_DSon≤ 340 mΩ.

2. Pinning information

Table 1:

Pinning - SOT416 (SC-75), simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

MBB076

Top view

MBK090

SOT416 (SC-75)

3. Ordering information

Table 2:

Ordering information

Type number

Package

Name

Description

Plastic surface mounted package; 3 leads

Version

PMR280UN

SC-75

SOT416

12 3 4 5 6 7...12

中文翻译

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