PMR290UNE

更新时间： 2024-02-09 08:31:49

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	194K
描述
20 V, 700 mA N-channel Trench MOSFET

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PMR290UNE 数据手册

PMR290UNE

T416

20 V, 700 mA N-channel Trench MOSFET

Rev. 1 — 13 September 2011

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Very fast switching

 ESD protection up to 2 kV

 AEC-Q101 qualified

 Trench MOSFET technology

1.3 Applications

 Relay driver

 Low-side loadswitch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

[1]

I_D

V_GS= 4.5 V; T_amb= 25 °C

700

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 500 mA; T_j= 25 °C

290

380

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...16

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