Datasheet > PMEG6030EP,115

PMEG6030EP,115

更新时间： 2024-01-22 09:35:58

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	146K
描述
PMEG6030EP - 3 A low V_F MEGA Schottky barrier rectifier SOD 2-Pin

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数据手册

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PMEG6030EP,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOD	针数：	2
Reach Compliance Code：	not_compliant	风险等级：	7.95
Base Number Matches：	1

PMEG6030EP,115 数据手册

PMEG6030EP

3 A low V_FMEGA Schottky barrier rectifier

Rev. 01 — 21 January 2010

Product data sheet

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features

Average forward current: I_F(AV)≤ 3 A

Reverse voltage: V_R≤ 60 V

Low forward voltage

High power capability due to clip-bond technology

AEC-Q101 qualified

Small and flat lead SMD plastic package

1.3 Applications

Low voltage rectification

High efficiency DC-to-DC conversion

Switch Mode Power Supply (SMPS)

Reverse polarity protection

Low power consumption applications

1.4 Quick reference data

Table 1.

Quick reference data

T_j= 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward current

square wave;

δ = 0.5;

f = 20 kHz

[1]

T_amb≤ 50 °C

T_sp≤ 135 °C

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

530

200

I_F= 3 A

460

μA

V_R= 60 V

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.

12 3 4 5 6 7...13

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