Datasheet > PMEG6030EVP

PMEG6030EVP

更新时间： 2024-10-27 12:25:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	218K
描述
Low voltage rectification

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PMEG6030EVP 数据手册

PMEG6030EVP

High-temperature 60 V, 3 A Schottky barrier rectifier

4 March 2013

Product data sheet

1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

Average forward current: I_F(AV)≤ 3 A

Reverse voltage: V_R≤ 60 V

•

Low forward voltage

High power capability due to clip-bonding technology

Small and flat lead SMD plastic package

AEC-Q101 qualified

High temperature T_j≤ 175 °C

3. Applications

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

Low power consumption application

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5 ; f = 20 kHz; T_sp≤ 165 °C;

square wave

V_R

V_F

reverse voltage

forward voltage

T_j= 25 °C

I_F= 3 A; t_p≤ 300 µs; δ ≤ 0.02 ;

T_j= 25 °C; pulsed

420

475

I_R

reverse current

T_j= 25 °C; V_R= 60 V; pulsed

115

400

µA

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