Datasheet > PK537BA

PK537BA

更新时间： 2024-11-24 17:15:23

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	409K
描述
PDFN 5x6

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中文翻译

获取价格

数据手册

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PK537BA 数据手册

P-Channel Logic Level Enhancement Mode

Field Effect Transistor

PK537BA

NIKO-SEM

PDFN 5x6P

Halogen-Free & Lead-Free

D1 D1 D1 D1

PRODUCT SUMMARY

V_(BR)DSS

-30V

R_DS(ON)

I_D

G : GATE

D : DRAIN

S : SOURCE

-38A

8mΩ

S1 S1 S1

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-30

UNITS

Gate-Source Voltage

V_GS

±25

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

-38

-24

Continuous Drain Current

I_D

-12

-10

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

-100

-37

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

68.4

8.3

Power Dissipation

P_D

2.3

1.4

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

R_JA

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25° C. The value in any given application depends on the user's specific board design.

K-14-2

REV1.1

12 3 4

中文翻译

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