Datasheet > PJSD05LCTM-AU_L1_10001

PJSD05LCTM-AU_L1_10001

更新时间： 2024-11-25 12:04:15

品牌	Logo	应用领域
强茂 - PANJIT		二极管
页数	文件大小	规格书
5页	179K
描述
BI-DIRECTIONAL ESD PROTECTION DIODE

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PJSD05LCTM-AU_L1_10001 数据手册

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PJSD05LCTM-AU

BI-DIRECTIONAL ESD PROTECTION DIODE

This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up

events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to

data line where the board space is a premium.

SPECIFICATION FEATURES

• 25W Power Dippsipation (8/20s Waveform)

• Low Leakage Current, Maximum of 1A@5Vdc

• Very low Clamping voltage

• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

• Acqire quality system certificate : TS16949

• AEC-Q101 qualified

APPLICATIONS

• Video I/O ports protection

• Set Top Boxes

• Portable Instrumentation

MECHANICAL DATA

• Case : SOD-923, Plastic

• Terminals : Solderable per MIL-STD-750, Method 2026

• Approx. Weight : 0.0004gram

• Marking : X

MAXIMUM RATINGS

Rating

Symbol

Value

Units

Peak Pulse Power (8/20 s Waveform)

Peak Pulse Current (8/20 s Waveform)

ESD Voltage (HBM)

>25

^OC

V_ESD

Operating Junction and Storage Temperature Range

,TSTG

-55 to +150

ELECTRICAL CHARACTERISTICS(TA=25^oC)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

5.0

Units

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage (8/20s)

Off State Junction Capacitance

WRM

BR=1mA

5.78

7.82

1.0

R=5V

A

PP=2A

12.5

0 Vdc Bias f=1MHz

PAGE . 1

February 2,2013-REV.03

12 3 4 5

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