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PJSD05LCTM-AU_AD_00001 PDF预览

PJSD05LCTM-AU_AD_00001

更新时间: 2024-11-21 12:04:15
品牌 Logo 应用领域
强茂 - PANJIT 二极管
页数 文件大小 规格书
5页 179K
描述
BI-DIRECTIONAL ESD PROTECTION DIODE

PJSD05LCTM-AU_AD_00001 数据手册

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PJSD05LCTM-AU  
BI-DIRECTIONAL ESD PROTECTION DIODE  
This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up  
events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to  
data line where the board space is a premium.  
SPECIFICATION FEATURES  
• 25W Power Dippsipation (8/20s Waveform)  
• Low Leakage Current, Maximum of 1A@5Vdc  
• Very low Clamping voltage  
• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance  
• Lead free in comply with EU RoHS 2011/65/EU directives  
• Green molding compound as per IEC61249 Std. . (Halogen Free)  
• Acqire quality system certificate : TS16949  
• AEC-Q101 qualified  
APPLICATIONS  
• Video I/O ports protection  
• Set Top Boxes  
• Portable Instrumentation  
MECHANICAL DATA  
• Case : SOD-923, Plastic  
Terminals : Solderable per MIL-STD-750, Method 2026  
• Approx. Weight : 0.0004gram  
• Marking : X  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Units  
W
Peak Pulse Power (8/20 s Waveform)  
25  
2
P
PP  
Peak Pulse Current (8/20 s Waveform)  
ESD Voltage (HBM)  
A
I
PP  
>25  
kV  
OC  
VESD  
Operating Junction and Storage Temperature Range  
T
J
,TSTG  
-55 to +150  
ELECTRICAL CHARACTERISTICS(TA=25oC)  
Parameter  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
5.0  
Units  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage (8/20s)  
Off State Junction Capacitance  
V
WRM  
-
-
-
-
-
-
V
V
V
BR  
R
I
BR=1mA  
5.78  
7.82  
1.0  
I
V
R=5V  
-
-
-
A  
V
V
C
I
PP=2A  
12.5  
15  
C
J
0 Vdc Bias f=1MHz  
pF  
PAGE . 1  
February 2,2013-REV.03  

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