Datasheet > PJ13007

PJ13007

更新时间： 2024-11-30 22:44:27

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描述
NPN Epitaxial Silicon Transistor

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中文翻译

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PJ13007 数据手册

PJ13007

NPN Epitaxial Silicon Transistor

HIGH VOLTAGE SWITCH MODE APPLICATION

•

High Speed Switching

Suitable for Swiching Regulator and Motor Control

TO-220

•

ABSOLUTE MAXIMUM RATINGS (Ta= 25℃)

Characteristic

Collector Base Voltage

Collector Emitter

Voltage

Emitter Base Voltage

Collector Current (DC)

Collector Current

(Pulse)

Symbol

V_CBO

V_CEO

Rating

700

400

Uint

Pin : 1. Base

2. Collector

3. Emitter

V_EBO

ORDERING INFORMATION

Base Current

I_B

150

Collector Dissipation

Junction Temperature

Storage Temperature

℃

Device

Operating Temperature

Package

Tstg

-65 ~150

PJ13007CZ

-20℃～+85℃

TO-220

ELECTRICAL CHARACTERISTICS(Ta= 25℃)

Characteristic

*Collector Emitter Sustaining Voltage

Emitter Cutoff Current

Symbol

Test Condition

Ic = 10mA, I_B= 0

V_EB=9V, Ic=0

V_CE=5V, Ic =2A

V_CE=5V, Ic =5A

Min

400

Typ

Max

Unit

V_{CEO SUS}

(

)

I_EBO

h_FE

*DC Current Gain

*Collector Emitter Saturation Voltage

*Base Emitter Saturation Voltage

V_CE(sat) Ic =2A, I_B=0.4A

Ic =5A, I_B=1A

Ic =8A, I_B=2A

V_BE(sat) Ic =2A, I_B=0.4A

Ic =5A, I_B=1A

1.2

1.6

Output Capacitance

Current Gain Bandwidth Product

Turn On Time

Storage Time

Fall Time

C_OB

V_CB=10V, f =0.1MHz

V_CE=10V, Ic =0.5A

V_CC=125V, Ic =5A

I_B1=I_B2=1A

110

MHz

μS

t _on

t_f

1.6

0.7

ꢀ

Pulse Test: PW≤300 μS, Duty Cycle ≤2 %

1-2

2002/01.rev.A

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