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PIP3122-R

更新时间: 2024-01-19 01:38:56
品牌 Logo 应用领域
飞利浦 - PHILIPS 驱动接口集成电路
页数 文件大小 规格书
7页 40K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

PIP3122-R 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.82配置:Single
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):107 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

PIP3122-R 数据手册

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Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3122-R  
DESCRIPTION  
QUICK REFERENCE DATA  
Monolithic logic level protected  
power MOSFET using TOPFET2  
technology assembled in a 5 pin  
surface mounting plastic package.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Continuous drain source voltage  
Continuous drain current  
Total power dissipation  
Continuous junction temperature  
Drain-source on-state resistance  
50  
40  
107  
150  
20  
V
A
W
˚C  
m  
APPLICATIONS  
RDS(ON)  
General purpose switch for driving  
lamps  
SYMBOL  
PARAMETER  
NOM.  
UNIT  
motors  
solenoids  
heaters  
VPS  
Protection supply voltage  
5
V
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
TrenchMOS output stage with  
low on-state resistance  
Separate input pin for higher  
frequency drive  
PROTECTION SUPPLY  
DRAIN  
5 V logic compatible input  
Separate supply pin for logic  
and protection circuits with low  
operating current  
FLAG  
OC LOAD  
O/V  
DETECT  
CLAMP  
POWER  
Overtemperature protection  
Drain current limiting  
INPUT  
MOSFET  
RIG  
Short circuit load protection  
Latched overload trip state reset  
by the protection pin  
Diagnostic flag pin indicates  
protection supply connected,  
overtemperature condition,overload  
tripped state, or open circuit load  
(detected in the off-state)  
ESD protection on all pins  
Overvoltage clamping  
LOGIC AND  
PROTECTION  
SOURCE  
Fig.1. Elements of the TOPFET.  
PINNING - SOT426  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
mb  
D
S
input  
flag  
TOPFET  
2
P
F
I
P
3
(connected to mb)  
protection supply  
source  
3
4
1 2  
4 5  
5
Fig. 2.  
Fig. 3.  
mb drain  
October 2002  
1
Rev 1.000  

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