PIC16F87

更新时间： 2024-11-17 06:03:23

品牌	Logo	应用领域
美国微芯 - MICROCHIP		闪存
页数	文件大小	规格书
24页	404K
描述
Flash Memory Programming Specification

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数据手册

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PIC16F87 数据手册

PIC16F87/88

This document includes programming specifications

for the following devices:

• PIC16F87

• PIC16F88

Flash Memory Programming Specification

Both algorithms can be used with the two available

programming entry methods. The first method, called

Low-Voltage ICSP^TM(LVP for short), applies VDD to

MCLR and uses the I/O pin RB3 to enter Programming

mode. When RB3 is driven to VDD from ground, the

PIC16F87/88 device enters Programming mode. The

second method follows the normal Microchip

Programming mode entry of holding pins RB6 and RB7

low, while raising the MCLR pin from VIL to VIHH

(13V ± 0.5V).

1.0

DEVICE OVERVIEW

2.0

PROGRAMMING THE

PIC16F87/88

The PIC16F87/88 is programmed using a serial

method. The Serial mode will allow the PIC16F87/88 to

be programmed while in the user’s system, which

allows for increased design flexibility. This

programming specification applies to PIC16F87/88

devices in all packages.

2.2

Programming Mode

The Programming mode for the PIC16F87/88 allows

programming of user program memory, data memory,

special locations used for ID, and the configuration

words.

2.1

Programming Algorithm

Requirements

The programming algorithm used depends on the

operating voltage (VDD) of the PIC16F87/88 device.

Algorithm #

VDD Range

2.0V ≤ VDD < 5.5V

4.5V ≤ VDD ≤ 5.5V

FIGURE 2-1:

PIC16F87 18-PIN DIP, SOIC

RA2/AN2/CVREF

RA3/AN3/C1OUT

RA1/AN1

RA0/AN0

RA4/T0CKI/C2OUT

RA5/MCLR/VPP

RA7/OSC1/CLKI

RA6/OSC2/CLKO

VDD

VSS

(1)

RB0/INT/CCP1

RB7/PGD/T1OSI

RB1/SDI/SDA

RB6/PGC/T1OSO/T1CKI

RB5/SS/TX/CK

RB2/SDO/RX/DT

(1)

RB3/PGM/CCP1

RB4/SCK/SCL

Note 1: Location of CCP1 function is determined by CCPMX.

2002 Microchip Technology Inc.

DS39607B-page 1

12 3 4 5 6 7...24

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