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PIC16C84 PDF预览

PIC16C84

更新时间: 2024-11-18 22:34:47
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美国微芯 - MICROCHIP 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 114K
描述
EEPROM Memory Programming Specification

PIC16C84 数据手册

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PIC16C84  
EEPROM Memory Programming Specification  
This document includes the programming  
specifications for the following devices:  
Pin Diagram  
PDIP, SOIC  
• PIC16C84  
RA2  
RA3  
RA4/T0CKI  
MCLR  
VSS  
•1  
2
3
4
5
6
7
8
9
18  
17  
16  
15  
14  
13  
12  
11  
10  
RA1  
RA0  
OSC1/CLKIN  
OSC2/CLKOUT  
VDD  
RB7  
RB6  
RB5  
RB4  
1.0  
PROGRAMMING THE PIC16C84  
The PIC16C84 is programmed using the serial method.  
The serial mode will allow the PIC16C84 to be pro-  
grammed while in the users system. This allows for  
increased design flexibility.  
RB0/INT  
RB1  
RB2  
RB3  
1.1  
Hardware Requirements  
The PIC16C84 requires one programmable power sup-  
ply for VDD (4.5V to 5.5V) and a VPP of 12V to 14V. Both  
supplies should have a minimum resolution of 0.25V.  
1.2  
Programming Mode  
The programming mode for the PIC16C84 allows pro-  
gramming of user program memory, data memory, spe-  
cial locations used for ID, and the configuration word.  
PIN DESCRIPTIONS (DURING PROGRAMMING): PIC16C84  
During Programming  
Pin Name  
Pin Name  
Pin Type  
Pin Description  
RB6  
RB7  
CLOCK  
DATA  
I
Clock input  
I/O  
P*  
P
Data input/output  
MCLR  
VDD  
VTEST MODE  
VDD  
Program Mode Select  
Power Supply  
Ground  
VSS  
VSS  
P
Legend: I =Input, O = Output, P = Power  
*In PIC16C84, programming high voltage is internally generated. To activate the programming mode, high voltage needs to be applied  
to MCLR input. This means that MCLR does not draw any significant current.  
1996 Microchip Technology Inc.  
DS30189D-page 1  
This document was created with FrameMaker 4 0 4  

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