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PIC16C52T-04I/P PDF预览

PIC16C52T-04I/P

更新时间: 2024-11-21 19:57:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟光电二极管外围集成电路
页数 文件大小 规格书
88页 526K
描述
8-BIT, OTPROM, 4 MHz, RISC MICROCONTROLLER, PDIP18, 0.300 INCH, PLASTIC, DIP-18

PIC16C52T-04I/P 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:18
Reach Compliance Code:unknownHTS代码:8542.31.00.01
风险等级:5.84具有ADC:NO
地址总线宽度:位大小:8
最大时钟频率:4 MHzDAC 通道:NO
DMA 通道:NO外部数据总线宽度:
JESD-30 代码:R-PDIP-T18长度:22.987 mm
I/O 线路数量:12端子数量:18
最高工作温度:85 °C最低工作温度:-40 °C
PWM 通道:NO封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
ROM可编程性:OTPROM座面最大高度:4.064 mm
速度:4 MHz最大供电电压:6.25 V
最小供电电压:3 V标称供电电压:5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:7.62 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER, RISC
Base Number Matches:1

PIC16C52T-04I/P 数据手册

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PIC16C52  
EPROM-Based 8-Bit CMOS Microcontroller  
Pin Diagrams  
Feature Highlights  
Program Memory  
384  
Data Memory  
I/O  
PDIP, SOIC  
25  
12  
18  
17  
16  
15  
14  
13  
12  
11  
10  
RA1  
• 1  
2
RA2  
RA3  
High-Performance RISC CPU  
RA0  
OSC1/CLKIN  
OSC2/CLKOUT  
VDD  
3
T0CKI  
MCLR/VPP  
VSS  
• Only 33 single word instructions to learn  
• All single cycle instructions (1 µs) except for  
program branches which are two-cycle  
• Operating speed:  
4
5
RB7  
6
RB0  
RB6  
7
RB1  
RB5  
8
RB2  
- DC to 4 MHz clock input  
RB4  
9
RB3  
- DC to 1 µs instruction cycle  
• 384 x 12 on-chip EPROM program memory  
• 25 x 8 general purpose registers (SRAM)  
• Special function hardware registers  
• Two-level deep hardware stack  
• Direct, indirect and relative addressing modes  
Peripheral Features  
• 12 I/O pins with individual direction control  
• Sink/source current of 10 mA (max)  
• TMR0: 8-bit timer/counter with 8-bit  
programmable prescaler  
Special Microcontroller Features  
• Power-On Reset (POR)  
• Device Reset Timer (DRT)  
• Programmable code protection  
• Power saving SLEEP mode  
• Selectable oscillator options  
- RC:  
- XT:  
Low-cost RC oscillator  
Standard crystal/resonator  
CMOS Technology  
• Low-power, high-speed CMOS EPROM technology  
• Fully static design  
• Wide-operating voltage range (3.0 V to 6.25 V)  
• Commercial and Industrial temperature ranges  
• Low-power consumption  
- <2.0 mA @ 5.0 V, 4 MHz  
- 15 µA typical @ 3.0 V, 32 kHz  
- <3.0 µA typical standby current @ 3.0 V  
1995 Microchip Technology Inc.  
Advance Information  
DS30254B-page 1  
This document was created with FrameMaker 4 0 4  

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