PHB27NQ10T

更新时间： 2024-01-27 17:22:24

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
12页	118K
描述
N-channel TrenchMOS transistor

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技术参数
数据手册

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PHB27NQ10T 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	not_compliant	风险等级：	5.7
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	28 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	107 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

PHB27NQ10T 数据手册

Philips Semiconductors

Product specification

N-channel TrenchMOS transistor

PHP27NQ10T, PHB27NQ10T

PHD27NQ10T

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

• Low on-state resistance

• Fast switching

V_DSS= 100 V

I_D= 28 A

• Low thermal resistance

R_DS(ON)≤ 50 mΩ

GENERAL DESCRIPTION

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

Applications:-

• d.c. to d.c. converters

• switched mode power supplies

The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB27NQ10T is supplied in the SOT404 (D²PAK) surface mounting package.

The PHD27NQ10T is supplied in the SOT428 (DPAK) surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404 (D²PAK)

SOT428 (DPAK)

tab

DESCRIPTION

tab

gate

drain ¹

source

1 2 3

tab drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DSS

V_DGR

V_GS

I_D

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Continuous drain current

T_j= 25 ˚C to 175˚C

T_j= 25 ˚C to 175˚C; R_GS= 20 kΩ

100

± 20

˚C

T_mb= 25 ˚C; V_GS= 10 V

T_mb= 100 ˚C; V_GS= 10 V

T_mb= 25 ˚C

I_DM

P_D

T_j, T_stg

Pulsed drain current

Total power dissipation

Operating junction and

storage temperature

112

107

175

T_mb= 25 ˚C

- 55

1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.

August 1999

Rev 1.000

12 3 4 5 6 7...12

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