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PH4830L PDF预览

PH4830L

更新时间: 2024-11-25 06:00:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
12页 87K
描述
N-channel TrenchMOS logic level FET

PH4830L 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:LEAD FREE, PLASTIC, LFPAK-4针数:235
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.22
Is Samacsys:N雪崩能效等级(Eas):121 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):84 A
最大漏极电流 (ID):84 A最大漏源导通电阻:0.0048 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-235
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):62.5 W最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PH4830L 数据手册

 浏览型号PH4830L的Datasheet PDF文件第2页浏览型号PH4830L的Datasheet PDF文件第3页浏览型号PH4830L的Datasheet PDF文件第4页浏览型号PH4830L的Datasheet PDF文件第5页浏览型号PH4830L的Datasheet PDF文件第6页浏览型号PH4830L的Datasheet PDF文件第7页 
PH4830L  
N-channel TrenchMOS logic level FET  
Rev. 01 — 6 September 2007  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology.  
1.2 Features  
I Logic level threshold  
I Lead-free package  
I Very low switching and conduction  
losses  
I Optimized for use in DC-to-DC  
converters  
I 100 % RG tested  
I 100 % ruggedness tested  
1.3 Applications  
I DC-to-DC converters  
I Voltage regulators  
I Switched-mode power supplies  
I PC Motherboards  
1.4 Quick reference data  
I VDS 30 V  
I ID 84 A  
I RDSon 4.8 mΩ  
I QGD = 5.4 nC (typ)  
2. Pinning information  
Table 1.  
Pin  
Pinning  
Description  
Simplified outline  
Symbol  
1, 2, 3  
4
source (S)  
D
mb  
gate (G)  
mb  
mounting base; connected to drain (D)  
G
mbb076  
S
1
2 3 4  
SOT669 (LFPAK)  

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