PH2729-5M
Radar Pulsed Power Transistor
5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
M/A-COM Products
Released, 29 Jun 07
Outline Drawing
Features
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NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
Rating
Units
V
65
3.0
V
0.7
A
PTOT
TSTG
TJ
50
W
°C
°C
-65 to +200
200
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Symbol Min
Max Units
Collector-Emitter Breakdown Voltage IC = 10mA
BVCES
ICES
RTH(JC)
POUT
65
-
-
V
Collector-Emitter Leakage Current
VCE = 40V
1.5
mA
Thermal Resistance
Output Power
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
-
3.5
-
°C/W
W
5.0
Power Gain
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
GP
7.0
30
-
-
dB
%
Collector Efficiency
ηC
Input Return Loss
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
RL
-
-
-6
dB
Load Mismatch Tolerance
Load Mismatch Stability
VSWR-T
VSWR-S
3:1
-
-
-
1.5:1
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
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changes to the product(s) or information contained herein without notice.