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PH1617-60 PDF预览

PH1617-60

更新时间： 2024-11-28 22:19:23
品牌 Logo 应用领域
泰科 - TE 晶体晶体管无线局域网
页数 文件大小 规格书
2页 99K
描述
Wireless Power Transistor 60 Watts, 1615 - 1685 MHz

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PH1617-60 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.04Is Samacsys：N
其他特性：WITH EMITTER BALLASTING RESISTORS外壳连接：EMITTER
最大集电极电流 (IC)：5.8 A集电极-发射极最大电压：20 V
配置：SINGLE最高频带：L BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PH1617-60 数据手册

 浏览型号PH1617-60的Datasheet PDF文件第2页 
PH1617-60  
Wireless Power Transistor  
60 Watts, 1615 - 1685 MHz  
Features  
Outline Drawing1  
•
•
•
•
•
•
NPN Silicon Microwave Power Transistor  
Common Emitter Configuration  
Diffused Emitter Ballasting Resistors  
Gold Metalization System  
Internal Input and Output Impedance Matching  
-28 dBc Typical IMD at 60 Watts PEP  
Description  
M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor  
intended for use as a common emitter class AB stage in power  
amplifiers that operate in the 1615 to 1685 MHz range. This  
transistor features internal input and output impedance matching,  
diffused emitter ballasting and gold metalization.  
The PH1617-60 is packaged in a low cost, non-hermetic ceramic  
package which has very low thermal impedance.  
Notes: (unless otherwise specified)  
1. Tolerances are: inches ± 0.005” (millimeters ± 0.13mm)  
Broadband Test Fixture Impedance  
F (MHz)  
Z IF (Ω)  
Z OF (Ω)  
Absolute Maximum Rating at 25°C  
1600  
1650  
1700  
1.5 - j3.6  
1.4 - j3.1  
1.5 - j2.9  
2.9 - j1.7  
2.9 - j1.1  
3.0 - j0.5  
Parameter  
Symbol  
Rating  
Units  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
20  
V
V
V
VCES  
65  
VEBO  
3.0  
Collector Current  
IC  
PD  
Tstg  
TJ  
5.8  
150  
A
W
Power Dissipation  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
-50 to +150  
200  
°C  
°C  
θjc  
1.0  
°C/W  
Electrical Specifications at 25°C  
Symbol  
hFE  
Parameter  
DC Forward Current Gain  
Power Gain  
Test Conditions  
Min  
15  
9.0  
40  
Max  
120  
-
-
Units  
-
dB  
%
VCE = 5.0 V, IC = 2 A  
GP  
VCC = 26 V, ICQ = 260 mA, POUT = 60 W, f = 1615, 1685 MHz  
VCC = 26 V, ICQ = 260 mA, POUT = 60 W, f = 1615, 1685 MHz  
Collector Efficiency  
ηc  
RL  
Input Return Loss  
VCC = 26 V, ICQ = 260 mA, POUT = 60 W, f = 1615, 1685 MHz  
VCC = 26 V, ICQ = 260 mA, POUT = 60 W, f = 1615, 1685 MHz  
10  
-
-
dB  
-
VSWR-T Load Mismatch Tolerance  
2:1  
V2.00  
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087  
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
www.macom.com  
AMP and Connecting at a Higher Level are trademarks.  
Specifications subject to change without notice.  
12

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