Datasheet > PFS3520R-LF

PFS3520R-LF

更新时间： 2024-11-27 15:47:47

品牌	Logo	应用领域
WTE		局域网二极管
页数	文件大小	规格书
2页	29K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 35A, 16V V(RRM), Silicon, DO-21,

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数据手册

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PFS3520R-LF 数据手册

PFS3520, PFS3524, PFS3536

35A AVALANCHE 1/2” RUGGED LEAD PRESS-FIT DIODE

WON-TOP ELECTRONICS

Features



Diffused Junction



Low Leakage

Low Cost

High Surge Current Capability

Typical IR less than 200nA

Rugged 2.54mm Dia. Lead

Anode +

Mechanical Data

DO-21 Rugged Lead



Case: DO-21, Copper Case and Components

Hermetically Sealed

Dim

Min

Max

15.97

12.82

15.77

12.73



Terminals: Contact Areas Readily Solderable

Polarity: Cathode to Case (Reverse Units Are

Available Upon Request and Are Designated

By A “R” Suffix, i.e. PFS3520R or PFS3524R)

Polarity: Red Color Equals Standard,

Black Color Equals Reverse Polarity

Mounting Position: Any

2.54 Ø Typical

9.55

5.70

9.85

5.90



22.55

22.85

All Dimensions in mm



Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

PFS3520

PFS3524

PFS3536

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

Average Rectified Output Current

@T_C= 150°C

Breakdown Voltage Min.

Breakdown Voltage Max.

@I_R= 100mA

VBR

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

400

Forward Voltage

@I_F= 35A

VFM

IRM

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

200

@T_A= 25°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

300

1.2

°C/W

°C

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-65 to +175

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance: Junction to case, single side cooled.

Revision: April, 2012

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