PF5003G-LF

更新时间： 2024-11-15 13:12:15

品牌	Logo	应用领域
WTE		整流二极管
页数	文件大小	规格书
2页	30K
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数据手册

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PF5003G-LF 数据手册

WTE

POWER SEMICONDUCTORS

PF5000 – PF5006

50A 1/2" PRESS-FIT DIODE

Features

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Typical IR less than 5.0µA

Anode +

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Mechanical Data

DO-21

Case: DO-21, Copper Case and Components

Hermetically Sealed

Dim

Min

15.77

12.73

1.25

Max

15.97

12.82

1.31

9.85

5.90

—

Terminals: Contact Areas Readily Solderable

Polarity: Cathode to Case (Reverse Units Are

Available Upon Request and Are Designated

By A “R” Suffix, i.e. PF5002R or PF5004R)

Polarity: Red Color Equals Standard,

Black Color Equals Reverse Polarity

Mounting Position: Any

9.55

5.70

28.00

All Dimensions in mm

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol PF5000 PF5001 PF5002 PF5003 PF5004 PF5005 PF5006 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

400

280

500

350

600

420

RMS Reverse Voltage

V^R(RMS)

I^O

210

Average Rectified Output Current @T_C= 150°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

500

1.0

Forward Voltage

@I_F= 50A

V^FM

I^RM

Peak Reverse Current

@T_A= 25°C

5.0

500

µA

At Rated DC Blocking Voltage

@T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

C^j

400

1.0

°C/W

°C

R^ꢀ^JC

T^J, T^STG

-65 to +175

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance: Junction to case, single side cooled.

PF5000 – PF5006

1 of 2

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