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PF48F5000M0YBC0 PDF预览

PF48F5000M0YBC0

更新时间: 2024-01-09 06:55:44
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路闪存
页数 文件大小 规格书
141页 2256K
描述
Flash, 32MX16, 96ns, PBGA107,

PF48F5000M0YBC0 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FBGA, BGA107,9X12,32Reach Compliance Code:unknown
风险等级:5.8最长访问时间:96 ns
启动块:BOTTOM命令用户界面:NO
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B107内存密度:536870912 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:256端子数量:107
字数:33554432 words字数代码:32000000
最高工作温度:85 °C最低工作温度:-30 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA107,9X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
页面大小:16 words并行/串行:PARALLEL
电源:1.8 V认证状态:Not Qualified
部门规模:128K最大待机电流:0.00003 A
子类别:Flash Memories最大压摆率:0.05 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:NO
类型:NOR TYPEBase Number Matches:1

PF48F5000M0YBC0 数据手册

 浏览型号PF48F5000M0YBC0的Datasheet PDF文件第3页浏览型号PF48F5000M0YBC0的Datasheet PDF文件第4页浏览型号PF48F5000M0YBC0的Datasheet PDF文件第5页浏览型号PF48F5000M0YBC0的Datasheet PDF文件第7页浏览型号PF48F5000M0YBC0的Datasheet PDF文件第8页浏览型号PF48F5000M0YBC0的Datasheet PDF文件第9页 
M18 Discrete  
Revision History  
Date  
Revision Description  
14-April-06  
001  
002  
Initial Release  
Updated the template (naming and branding).  
On the cover page, changed BEFP from 1.6 µs/byte (typ) to 3.2 µs/Word (typ).  
28-April-06  
Correced the BEFP on the cover page to read 3.2 µs/Word and synchronized the BEFP on the  
cover with that in Section 7.4, “Program and Erase Characteristics” on page 68.  
Added Figure 1, “Mechanical Specifications: x16D (105-ball) package (8x10x1.0 mm)” on page 13 and  
Figure 5, “Mechanical Specifications: x16 Split Bus (165-ball) package (10x11x1.2 mm)” on page 17.  
Added the following line item part numbers:  
—PF48F6000M0Y0BE  
—PF38F6070M0Y0BE  
20-June-06  
003  
004  
—PF38F6070M0Y0VE  
—PF48F6000M0Y1BE  
Removed information on the 90 nm Extended Flash Array (EFA) feature that is no longer  
supported.  
October 2006  
Revised to include 65 nm, 1-Gbit device information. Moved sections for Device ID, Additional  
Information, and Order Information to Functional Description chapter. Created a separate M18  
Developer’s Manual to include the following information:  
—Bus Interface  
—Flash Operations  
—Device Command Codes  
—Flow Charts  
—Common Flash Interface  
—Next State Table  
Removed line item PF5566MMY0C0 (512+512 M18 + 128 + 128 PSRAM) and its accompanying  
package (8x11x1.4, x16C 107 ball).  
Added the following line items:  
—PF48F6000M0Y0BE, 65 nm  
—PF38F6070M0Y0BE, 65 nm  
—PF38F4060M0Y0B0  
November 2006  
005  
—PF58F0031M0Y1BE, 65 nm  
—PF38F6070M0Y0C0, 65 nm  
—PF38F4060M0Y0C0  
—PF38F4060M0Y1C0  
—PF38F6070M0Y0VE, 65 nm  
Added the following packages to support new line items:  
—8x10x1.0, x16D 105 ball  
—11x15x1.2, x16D 105 ball  
—11x11x1.2, x16C 107 ball  
—8x10x1.2, x16C 107 ball  
—10x11x1.2, x16SB 165 ball  
November 2006  
February 2007  
March 2007  
006  
007  
008  
Updated line item information.  
Added the following line items and package as applicable:  
PF48F4000M0Y0CE, 8x10x1.0 x16C  
Updated timing diagrams in AC Characteristics section.  
Added note stating the value of RCR8 in timing diagrams inSection 7.2.1, “Read Timing Waveforms”  
on page 51.  
July 2007  
009  
10  
Resized several timing diagrams in AC Characteristics section.  
Updated timing diagrams Figure 31, “Async Read to Write (Non-Mux)” on page 63, Figure 36, “Async Read  
to Write (AD-Mux)” on page 66 and Figure 37, “Write to Async Read (AD-Mux)” on page 66  
Added AAD Mux appendix.  
Applied Numonyx branding.  
November 2007  
Datasheet  
6
November 2007  
Order Number: 309823-10  

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