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PF48F2000P0XTQ0 PDF预览

PF48F2000P0XTQ0

更新时间: 2024-01-20 18:47:59
品牌 Logo 应用领域
英特尔 - INTEL 内存集成电路闪存
页数 文件大小 规格书
104页 1595K
描述
Flash, 4MX16, 85ns, PBGA80, 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88/80

PF48F2000P0XTQ0 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TFBGA, BGA88,8X12,32Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.69最长访问时间:85 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B80
长度:10 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:4,63
端子数量:80字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA88,8X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
页面大小:4 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:16K,64K
最大待机电流:0.000035 A子类别:Flash Memories
最大压摆率:0.028 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

PF48F2000P0XTQ0 数据手册

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®
Intel StrataFlash Embedded Memory (P33)  
Datasheet  
Product Features  
„ High performance:  
„ Security:  
— 85 ns initial access  
— One-Time Programmable Registers:  
— 64 unique factory device identifier bits  
— 2112 user-programmable OTP bits  
— Selectable OTP space in Main Array:  
— Four pre-defined 128-KByte blocks (top or  
bottom configuration).  
— 52MHz with zero wait states, 17ns clock-to-  
data output synchronous-burst read mode  
— 25 ns asynchronous-page read mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— Up to Full Array OTP Lockout  
— Absolute write protection: V = V  
— 3.0 V buffered programming at 7 µs/byte  
PP  
SS  
(Typ)  
„ Architecture:  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down capability  
„ Software:  
— Multi-Level Cell Technology: Highest Density  
at Lowest Cost  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or  
bottom configuration  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
®
— Intel Flash Data Integrator optimized  
— 128-KByte main blocks  
— Basic Command Set and Extended Command  
„ Voltage and Power:  
Set compatible  
— V  
— V  
(core) voltage: 2.3 V – 3.6 V  
CCQ  
CC  
— Common Flash Interface capable  
„ Density and Packaging  
(I/O) voltage: 2.3 V – 3.6 V  
— Standby current: 35µA (Typ) for 64-Mbit  
— 4-Word synchronous read current:  
16 mA (Typ) at 52MHz  
— 56-Lead TSOP package (64, 128, 256, 512-  
Mbit)  
— 64-Ball Intel® Easy BGA package (64, 128,  
256, 512-Mbit)  
„ Quality and Reliability  
— Operating temperature: –40 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology  
— Intel® QUAD+ SCSP (64, 128, 256, 512-Mbit)  
— 16-bit wide data bus  
Order Number: 314749-004  
November 2007  

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