Datasheet > PESD7V1R1BCSF

PESD7V1R1BCSF

更新时间： 2024-03-03 10:09:46

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	147K
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PESD7V1R1BCSF

Extremely low clamping bidirectional ESD protection diode

26 September 2023

Short data sheet

1. General description

Extremely low clamping, extremely low capacitance bidirectional ElectroStatic Discharge (ESD)

protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2

(SOD962-2) leadless, ultra-small Surface-Mounted Device (SMD) package designed to protect one

signal line from the damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Extremely low Harmonic Distortion, very reproducible due to monolithic construction

Extremely low diode capacitance, C_d= 0.108 pF at 1 MHz typical

Extremely low insertion loss: -0.25 dB at 10 GHz

Extremely low return loss: -19.4 dB at 10 GHz

Extremely low clamping voltage to protect sensitive transceivers

Extremely low leakage current: 1 nA at 7.1 V typical

Extremely low inductance protection path to ground

20 Gbps capable

Ultra-small SMD package

3. Applications

•

Antenna protection up to 27 dBm input power

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

USB4, USB3.2, Thunderbolt4 and HDMI2.1 data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-7.1

7.1

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.108 0.13

12 3 4 5 6 7

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