Datasheet > PESD2CANFD36UQC-Q

PESD2CANFD36UQC-Q

更新时间： 2024-04-09 19:03:24

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安世 - NEXPERIA		/
页数	文件大小	规格书
11页	227K
描述
Extremely low clamping bidirectional ESD protection diodeProduction

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PESD2CANFD36UQC-Q

Extremely low clamping bidirectional ESD protection diode

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

V_BR

I_RM

C_d

breakdown voltage

I_R= 10 mA; T_amb= 25 °C

[1]

4.3

reverse leakage current V_RWM= 36 V; T_amb= 25 °C

[1]

diode capacitance

f = 1 MHz; V_R= 2.5 V; T_amb= 25 °C

f = 1 MHz; V_R= -2.5 V; T_amb= 25 °C

f = 1 MHz; V_R= 2.5 V; T_amb= 25 °C

f = 1 MHz; V_R= -2.5 V; T_amb= 25 °C

I_PP= 1 A; t_p= 8/20 µs; T_amb= 25 °C

I_PP= 16 A; t_p= 100 ns; T_amb= 25 °C

I_R= 10 A; t_p= 100 ns; T_amb= 25 °C

[1]

3.9

0.5

2.2

[1]

ΔC_d/C_d

V_CL

diode capacitance

matching

[2]

clamping voltage

[3] [1]

[4] [1]

R_dyn

dynamic resistance

[1] Measured from pin 1 or 2 to pin 3.

[2] ∆C_dis the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3.

[3] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[4] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

aaa-038354

(pF)

dyn

RWM

t1(transient)

RWM

t1(transient)

dyn

-36

-12

(V)

aaa-032449

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

Fig. 3. Transient characteristics for a bidirectional ESD

protection device

PESD2CANFD36UQC-Q

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Product data sheet

4 January 2024

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