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PEMH18,115 PDF预览

PEMH18,115

更新时间: 2024-02-19 22:56:45
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
14页 586K
描述
PEMH18; PUMH18 - NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ SOT 6-Pin

PEMH18,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT包装说明:PLASTIC PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.36
其他特性:BUILT IN BIAS RESISTOR RATIO 2.1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PEMH18,115 数据手册

 浏览型号PEMH18,115的Datasheet PDF文件第2页浏览型号PEMH18,115的Datasheet PDF文件第3页浏览型号PEMH18,115的Datasheet PDF文件第4页浏览型号PEMH18,115的Datasheet PDF文件第5页浏览型号PEMH18,115的Datasheet PDF文件第6页浏览型号PEMH18,115的Datasheet PDF文件第7页 
PEMH18; PUMH18  
NPN/NPN resistor-equipped transistors;  
R1 = 4.7 k, R2 = 10 k  
Rev. 4 — 19 December 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted  
Device (SMD) plastic packages.  
Table 1.  
Product overview  
Type number Package  
NXP  
NPN/PNP  
complement  
PNP/PNP  
complement  
Package  
configuration  
JEITA  
PEMH18  
PUMH18  
SOT666  
-
PEMD18  
PUMD18  
PEMB18  
PUMB18  
ultra small and flat lead  
very small  
SOT363 SC-88  
1.2 Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
Simplifies circuit design  
1.3 Applications  
Low current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors in digital applications  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
IO  
collector-emitter voltage open base  
output current  
-
-
50  
V
-
-
100  
6.1  
2.6  
mA  
k  
R1  
bias resistor 1 (input)  
bias resistor ratio  
3.3  
1.7  
4.7  
2.1  
R2/R1  
 
 
 
 
 

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