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PE606BA PDF预览

PE606BA

更新时间: 2024-11-22 17:15:51
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
4页 235K
描述
PDFN 3x3

PE606BA 数据手册

 浏览型号PE606BA的Datasheet PDF文件第2页浏览型号PE606BA的Datasheet PDF文件第3页浏览型号PE606BA的Datasheet PDF文件第4页 
PE606BA  
N-Channel Enhancement Mode  
Field Effect Transistor  
NIKO-SEM  
PDFN 3x3P  
Halogen-Free & Lead-Free  
D
PRODUCT SUMMARY  
3
V(BR)DSS  
30V  
RDS(ON)  
ID  
D
S
D
S
D
S
D
G
23A  
18mΩ  
G
G : GATE  
D : DRAIN  
S : SOURCE  
S
#1  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
UNITS  
30  
±20  
23  
V
V
Gate-Source Voltage  
VGS  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current3  
15  
ID  
10.6  
8.5  
Continuous Drain Current3  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
60  
12.6  
7.9  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
mJ  
W
17  
Power Dissipation  
Power Dissipation4  
7
PD  
3.5  
2.2  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJA  
TYPICAL  
MAXIMUM  
UNITS  
Junction-to-Ambient2  
35  
70  
7
t 10s  
Junction-to-Ambient2  
Steady-State  
Steady-State  
°C / W  
RJA  
Junction-to-Case  
RJC  
1Pulse width limited by maximum junction temperature.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25°C.  
3Package limitation current is 11A  
4The Power dissipation is based on RJA t 10s value.  
E-29-1  
REV 1.2  
1

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