Datasheet > PE551BA

PE551BA

更新时间： 2024-11-24 17:15:19

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	806K
描述
PDFN 3x3

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中文翻译

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数据手册

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PE551BA 数据手册

P-Channel Logic Level Enhancement Mode

Field Effect Transistor

PE551BA

NIKO-SEM

PDFN 3x3P

Halogen-free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-30V

R_DS(ON)

I_D

20mΩ

-22A

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-30

±25

-22

-14

-9

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current⁴

I_D

-7

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

-40

-23

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

Power Dissipation³

P_D

Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM UNITS

Junction-to-Ambient²

Junction-to-Case

t ≦10s

°C / W

Steady-State

R_θJA

R_JC

7.2

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

⁴Package limitation current is -21A

REV 1.3

N-32-4

12 3 4 5

中文翻译

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