Datasheet > PE529BA

PE529BA

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	337K
描述
PDFN 3x3

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中文翻译

获取价格

数据手册

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PE529BA 数据手册

P-Channel Logic Level Enhancement Mode

Field Effect Transistor

PE529BA

NIKO-SEM

PDFN 3x3P

Halogen-free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-20V

R_DS(ON)

I_D

9.5mΩ

-34A

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-20

±8

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

-34

-21

-12

-9.8

-100

-39

Continuous Drain Current³

I_D

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

17.8

Power Dissipation

P_D

2.3

1.5

Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_θJA

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

Junction-to-Case

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³Package limitation current is 22A

REV 1.0

E-21-1

12 3 4

中文翻译

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