Datasheet > PDTC114TEF,115

PDTC114TEF,115

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	581K
描述
TRANS PREBIAS NPN 150MW SC89

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PDTC114TEF,115 数据手册

PDTC114T series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open

5. Limiting values

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_O

Parameter

Conditions

open emitter

open base

Min

Max

Unit

collector-base voltage

collector-emitter voltage

emitter-base voltage

output current

open collector

100

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

P_tot

total power dissipation

SOT416

T_amb≤ 25 °C

[1]

150

250

500

250

200

+150

150

+150

°C

SOT346

[2] [3]

[1]

SOT883

SOT54

[1]

SOT23

[1]

SOT323

T_stg

T_j

storage temperature

junction temperature

ambient temperature

−65

°C

T_amb

−65

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reﬂow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

6. Thermal characteristics

Table 7:

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

SOT416

SOT346

SOT883

SOT54

833

500

250

500

625

K/W

[2] [3]

[1]

SOT23

[1]

SOT323

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

PDTC114T_SER_8

Product data sheet

Rev. 08 — 9 February 2006

4 of 11

1 2 345 6 7...11

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