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PDM41532LA20SOATR PDF预览

PDM41532LA20SOATR

更新时间: 2024-01-18 03:22:46
品牌 Logo 应用领域
IXYS 静态存储器光电二极管
页数 文件大小 规格书
10页 230K
描述
Standard SRAM, 64KX16, 20ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

PDM41532LA20SOATR 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.32
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.41 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.0005 A
最小待机电流:2.5 V子类别:SRAMs
最大压摆率:0.12 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

PDM41532LA20SOATR 数据手册

 浏览型号PDM41532LA20SOATR的Datasheet PDF文件第1页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第3页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第4页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第5页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第6页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第7页 
PRELIMINARY  
PDM41532  
Pin Configuration  
SOJ  
TSOP (II)  
A4  
1
44  
43  
42  
41  
40  
39  
38  
37  
A5  
A4  
A3  
44  
A5  
1
A3  
2
A6  
43  
42  
41  
40  
39  
38  
37  
2
A6  
A2  
3
A7  
A2  
A7  
3
A1  
4
OE  
A1  
OE  
4
A0  
5
UB  
A0  
UB  
5
CE  
6
LB  
CE  
LB  
6
I/O0  
7
I/O15  
I/O14  
I/O13  
I/O12  
Vss  
Vcc  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
I/O0  
I/O1  
I/O2  
I/O3  
Vcc  
Vss  
I/O4  
I/O15  
I/O14  
7
I/O1  
8
8
I/O2  
9
36  
35  
34  
33  
32  
31  
30  
29  
36 I/O13  
35 I/O12  
9
I/O3  
10  
10  
11  
12  
13  
Vcc  
11  
34  
33  
32  
31  
30  
29  
Vss  
Vcc  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
Vss  
12  
I/O4  
13  
I/O5  
I/O6  
I/O7  
WE  
A15  
A14  
A13  
A12  
NC  
14  
I/O5 14  
15  
16  
17  
18  
I/O6  
15  
I/O7  
16  
28  
27  
26  
25  
24  
23  
WE  
17  
28  
27  
26  
25  
A8  
A15  
A14  
A13  
A12  
NC  
18  
A8  
A9  
19  
20  
21  
22  
A9  
19  
20  
21  
22  
A10  
A11  
NC  
A10  
24 A11  
NC  
23  
Pin Description  
Name  
Description  
A15-A0  
I/O15-I/O0  
CE  
Address Inputs  
Data Inputs/Outputs  
Chip Enable Input  
Write Enable Input  
Output Enable Input  
Data Byte Control Inputs  
No connect  
WE  
OE  
LB, UB  
NC  
V
Ground  
SS  
CC  
V
Power (+5V)  
Capacitance (T = +25°C, f = 1.0 MHz)  
A
Symbol  
Parameter  
Conditions  
Max.  
Unit  
C
C
Input Capacitance  
Output Capacitance  
V
= V  
SS  
6
8
pF  
pF  
IN  
IN  
V
= V  
SS  
I/O  
I/O  
NOTE: 1. This parameter is determined by device characterization, but is not production tested.  
2
Rev. 1.3 - 4/10/98  

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