Datasheet > PDB-C216

PDB-C216

更新时间： 2024-01-18 12:33:27

品牌	Logo	应用领域
ADVANCEDPHOTONIX		光电二极管光电二极管
页数	文件大小	规格书
1页	111K
描述
Blue Enhanced Linear Array Silicon Photodiode

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技术参数
数据手册

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PDB-C216 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.06	Base Number Matches：	1

PDB-C216 数据手册

Blue Enhanced Linear Array Silicon Photodiode

PDB-C216

PACKAGE DIMENSIONS INCH [mm]

.997 [25.32]

.987 [25.07]

.305 [7.75]

COMMON

.100 [2.54]

.800 [20.32]

16X ANODE

CATHODE

.062 [1.57]

11 13 15 17

.0625 [1.588]

18X .025 [0.64]

SQUARE

.425 [10.80]

.300 [7.62]

16 18

10 12 14

.143 [3.63]

COMMON

CATHODE

.177 [4.50]

.100 [2.54] TYP

PIN CONNECTIONS

CHIP DIMENSIONS INCH [mm]

ELEMENT

PIN NO.

ELEMENT

PIN NO.

.062 [1.57] PITCH

CHIP DIMENSIONS INCH [mm]

16X .072 [1.84]

ACTIVE AREA

.145 [3.68]

₁₀TO-46 PACKAGE

CATHODE

15X .010 [0.25] GAP

16X .048 [1.22] ACTIVE AREA

PCB PACKAGE

FEATURES

• Stackable

• Blue enhanced

• Low cost

DESCRIPTION

The PDB-C216 is a blue enhanced linear array 16

elements silicon photodiode designed to be stackable

and packaged in a PCB with a terminal strip package.

APPLICATIONS

• Card reader

• Baggage scanners

• Characters recognition

SPECTRAL RESPONSE

ABSOLUTE MAXIMUM RATING

(TA)= 23°C UNLESS OTHERWISE NOTED

0.80

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0.00

SYMBOL

V_BR

PARAMETER

MIN

MAX

UNITS

Reverse Voltage

T_STG

T_O

Storage Temperature

Operating Temperature

Soldering Temperature*

-40

-20

+100

+75

°C

T_S

+240

* 1/16 inch from case for 3 seconds max.

Wavelength (nm)

ELECTRO-OPTICAL CHARACTERISTICS RATING

(TA)= 23°C UNLESS OTHERWISE NOTED

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

MIN

TYP

MAX

UNITS

I_SC

I_D

R_SH

C_J

Short Circuit Current

Dark Current

Shunt Resistance

H = 100 fc, 2850 K

V_R= 5V

V_R= 10 mV

200

µA

MΩ

100

Junction Capacitance

V_R=10 V, f = 1 MHz

lrange

V_BR

Spectral Application Range

Spot Scan

350

1100

I = 10 μA

Breakdown Voltage

2x10^-14

190

V_R= 0V @ l=Peak

RL = 50 Ω,V_R= 0 V

RL = 50 Ω,V_R= 10 V

NEP

Noise Equivalent Power

W/ √ _Hz

t_r

Response Time**

**Response time of 10% to 90% is specified at 660nm wavelength light.

Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are

subject to change without notice.

Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com

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